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We introduce a unified framework for electronic transport based on the interplay between band gap
Eg and electronic rigidity K. The resulting scaling law σ ∼ Kγ
exp(−Eg/kBT) interpolates between
activation-dominated and coherence-dominated regimes. We demonstrate that gate-controlled modulation of K can induce large changes in conductivity, suggesting a new class of correlation-driven
electronic devices.
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Title Unified Nonequilibrium Framework for Electronic Transport: Interplay of Band Gap and Electronic Rigidity
We introduce a unified framework for electronic transport based on the interplay between band gap
Eg and electronic rigidity K. The resulting scaling law σ ∼ Kγ
exp(−Eg/kBT) interpolates between
activation-dominated and coherence-dominated regimes. We demonstrate that gate-controlled modulation of K can induce large changes in conductivity, suggesting a new class of correlation-driven
electronic devices.
Work type Technical
Tags hubbard model, quasiparticles, electronic transport, band gap, scaling law, dmft, electronic correlations, condensed matter physics, metal-insulator transition, electronic rigidity, conductivity
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Registry info in Safe Creative
Identifier 2603255076981
Entry date Mar 25, 2026, 12:51 PM UTC
License Creative Commons Attribution 4.0
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Author. Holder David Escobar Martin. Date Mar 25, 2026.
Information available at https://www.safecreative.org/work/2603255076981-unified-nonequilibrium-framework-for-electronic-transport-interplay-of-band-gap-and-electronic-rigidity
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Registration: 2603255076981
